Fabrication and Characterization of Transition Metal Dichalcogenides for the Production of Single Photon Emitters
Resumo
This work aimed to fabricate and characterize a single-photon emitter based on WSe₂ monolayers conformed onto tungsten nanopillars via strain engineering. Optical measurements showed enhanced emission intensity and redshift in strained regions, features typical of single-photon emitters in nanopillar structures. However, photon anticorrelation yielded g²(0) = 0.67 ± 0.022, indicating classical behavior. The low purity may result from lack of encapsulation, multiple defects, and limited spectral filtering. Still, the results show potential for advancing these emitters in quantum technologies.
Palavras-chave:
Quantum Key Distribution (QKD), Quantum Optics and Photonics, Quantum Networks and Emerging Technologies
Referências
AHARONOVICH, Igor; ENGLUND, Dirk; TOTH, Milos. Solid-state single-photon emitters. Nature Photonics, 29 set. 2016.
AZZAM, Shaimaa I.; PARTO, Kamyar; MOODY, Galan. Prospects and challenges of quantum emitters in 2D materials. Applied Physics Letters, v. 118, n. 24, p. 1-8, 2021.
HANBURY BROWN, R.; TWISS, R. Q. Correlation between photons in two coherent beams of light. Nature, v. 177, p. 27-29, 1956.
LINHART, Lukas; PAUR, Matthias; SMEJKAL, Valerie; BURGDÖRFER, Joachim; MUELLER, Thomas; LIBISCH, Florian. Localized Intervalley Defect Excitons as Single-Photon Emitters in WSe₂. Physical Review Letters, v. 123, n. 14, p. 146401, 2019.
LIU, W.; CAO, W.; KANG, J.; BANERJEE, K. High-Performance Field-Effect Transistors on Monolayer WSe2. ECS Transactions, v. 58, p. 281-285, 2013.
MAK, K. F.; LEE, C.; HONE, J.; SHAN, J.; HEINZ, T. F. Atomically Thin MoS2: A New Direct-Gap Semiconductor. Physical Review Letters, v. 105, p. 136805, 2010. ISSN 0031-9007.
MUELLER, Thomas; MALIC, Ermin. Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors. npj 2D Materials and Applications, v. 2, art. 29, 2018.
PARALIKIS, Athanasios; PICCININI, Claudia; MADIGAWA, Abdulmalik A.; METUH, Pietro; VANNUCCI, Luca; GREGERSEN, Niels; MUNKHBAT, Battulga. Tailoring polarization in WSe₂ quantum emitters through deterministic strain engineering. npj 2D Materials and Applications, v. 8, art. 59, 2024.
PARTO, Kamyar; AZZAM, Shaimaa I.; BANERJEE, Kaustav; MOODY, Galan. Defect and strain engineering of monolayer WSe2 enables site-controlled single-photon emission up to 150 K. Nature Communications, v. 12, art. 3585, 2021.
PUEBLA, Sergio; LI, Hai; ZHANG, Hua; CASTELLANOS-GOMEZ, Andres. Apparent Colors of 2D Materials. Advanced Photonics Research, v. 3, n. 4, art. 2100221, 2022.
TOTH, Milos; AHARONOVICH, Igor. Single Photon Sources in Atomically Thin Materials. Annual Review of Physical Chemistry, v. 70, p. 123-142, 2019.
YUANZHENG, Li. Et al. Accurate identification of layer number for few-layer WS2 and WSe2 via spectroscopic study. IOP Publishing Nanotechnology, Vol. 29, nº 12, 2018.
XIAO, D.; LIU, G.-B.; FENG, W.; XU, X.; YAO, W. Coupled Spin and Valley Physics in Monolayers of MoS2 and Other Group-VI Dichalcogenides. Physical Review Letters, v. 108, n. 19, 2012.
XU, Xiaodong; YAO, Wang; XIAO, Di; HEINZ, Tony F. Spin and pseudospins in layered transition-metal dichalcogenides. Nature Physics, v. 10, p. 343-350, maio 2014.
AZZAM, Shaimaa I.; PARTO, Kamyar; MOODY, Galan. Prospects and challenges of quantum emitters in 2D materials. Applied Physics Letters, v. 118, n. 24, p. 1-8, 2021.
HANBURY BROWN, R.; TWISS, R. Q. Correlation between photons in two coherent beams of light. Nature, v. 177, p. 27-29, 1956.
LINHART, Lukas; PAUR, Matthias; SMEJKAL, Valerie; BURGDÖRFER, Joachim; MUELLER, Thomas; LIBISCH, Florian. Localized Intervalley Defect Excitons as Single-Photon Emitters in WSe₂. Physical Review Letters, v. 123, n. 14, p. 146401, 2019.
LIU, W.; CAO, W.; KANG, J.; BANERJEE, K. High-Performance Field-Effect Transistors on Monolayer WSe2. ECS Transactions, v. 58, p. 281-285, 2013.
MAK, K. F.; LEE, C.; HONE, J.; SHAN, J.; HEINZ, T. F. Atomically Thin MoS2: A New Direct-Gap Semiconductor. Physical Review Letters, v. 105, p. 136805, 2010. ISSN 0031-9007.
MUELLER, Thomas; MALIC, Ermin. Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors. npj 2D Materials and Applications, v. 2, art. 29, 2018.
PARALIKIS, Athanasios; PICCININI, Claudia; MADIGAWA, Abdulmalik A.; METUH, Pietro; VANNUCCI, Luca; GREGERSEN, Niels; MUNKHBAT, Battulga. Tailoring polarization in WSe₂ quantum emitters through deterministic strain engineering. npj 2D Materials and Applications, v. 8, art. 59, 2024.
PARTO, Kamyar; AZZAM, Shaimaa I.; BANERJEE, Kaustav; MOODY, Galan. Defect and strain engineering of monolayer WSe2 enables site-controlled single-photon emission up to 150 K. Nature Communications, v. 12, art. 3585, 2021.
PUEBLA, Sergio; LI, Hai; ZHANG, Hua; CASTELLANOS-GOMEZ, Andres. Apparent Colors of 2D Materials. Advanced Photonics Research, v. 3, n. 4, art. 2100221, 2022.
TOTH, Milos; AHARONOVICH, Igor. Single Photon Sources in Atomically Thin Materials. Annual Review of Physical Chemistry, v. 70, p. 123-142, 2019.
YUANZHENG, Li. Et al. Accurate identification of layer number for few-layer WS2 and WSe2 via spectroscopic study. IOP Publishing Nanotechnology, Vol. 29, nº 12, 2018.
XIAO, D.; LIU, G.-B.; FENG, W.; XU, X.; YAO, W. Coupled Spin and Valley Physics in Monolayers of MoS2 and Other Group-VI Dichalcogenides. Physical Review Letters, v. 108, n. 19, 2012.
XU, Xiaodong; YAO, Wang; XIAO, Di; HEINZ, Tony F. Spin and pseudospins in layered transition-metal dichalcogenides. Nature Physics, v. 10, p. 343-350, maio 2014.
Publicado
19/05/2025
Como Citar
SABER, Adriel F. S.; DE LIMA, Marcela R.; OLIVEIRA, Suelen C. S.; TEODORO, Márcio D.; BARCELOS, Ingrid D.; MOREIRA, Fernando M. A..
Fabrication and Characterization of Transition Metal Dichalcogenides for the Production of Single Photon Emitters. In: WORKSHOP DE REDES QUÂNTICAS (WQUNETS), 2. , 2025, Natal/RN.
Anais [...].
Porto Alegre: Sociedade Brasileira de Computação,
2025
.
p. 19-24.
DOI: https://doi.org/10.5753/wqunets.2025.8800.
